School of Chemistry

Geoffrey Hyett

Lecturer
Research section: Inorganic & Materials Chemistry

Contact details

Keywords

Thin films
Chemical Vapour Deposition
Photocatalysis
Solid State Chemistry

Research interests

My research focuses on the synthesis of solid state inorganic materials, with a particular emphasis on mixed anion solids. We investigate the link between the composition and structure of solid state phases and their electronic, magnetic and optical properties. We are also interested in the application of such materials – for example in self-cleaning coatings and solar energy harvesting devices. We make use of a range of synthetic strategies, often using molecular precursors, to produce our solid state compounds and use Raman spectroscopy, electron microscopy and X-ray/neutron crystallography to characterise their structure and to assess their properties.

We also have an interest in the production of inorganic materials as thin films using the chemical vapour deposition (CVD) techniques. CVD allows the rapid indirect formation of a thin film of a compound on the order of 10 to 1000 nm thickness. This technique is of particular use in the glazing and electronic industries.

Selected publications

G. Hyett , O.J. Rutt, Z.A. Gal, S.G. Denis, M.A. Hayward, and S.J. Clarke, Electronically driven structural distortions in lithium intercalates of the n=2 Ruddlesden-popper-type host Y2Ti2O5S2: Synthesis, structure, and properties of LixY2Ti2O5S2 (0 < x < 2). Journal of the American Chemical Society, 2004. 126(7, 1980-1991.

G. Hyett, Z.A. Gal, C.F. Smura, and S.J. Clarke, Ba2Mn2O4Cu0.9S: A layered oxysulfide with a new perovskite-related manganese oxide fragment. Chemistry of Materials, 2008. 20(2), 559-566.

G. Hyett, M.A. Green, and I.P. Parkin, The Use of Combinatorial Chemical Vapor Deposition in the Synthesis of Ti3O4N: A Titanium Oxynitride Phase Isostructural to Anosovite. J. Am. Chem. Soc., 2007. 129(50), 15541-15548.

A. Salamat, G. Hyett, R.Q. Cabrera, P.F. McMillan, and I.P. Parkin, High-Pressure Behavior and Polymorphism of Titanium Oxynitride Phase Ti2.85O4N. Journal of Physical Chemistry C, 2010. 114(18), 8546-8551.